Ing. Alica Rosová, CSc.
Publications for year 2025
On this page, you can search the on-line database of the Central Library of the SAS for the publications.
Publications
- CHIDAMBARAM, Jeevan Roshan - ROSOVÁ, Alica - DOBROČKA, Edmund - HUŠEKOVÁ, Kristína - ŤAPAJNA, Milan - GUCMANN, Filip. Structural characterization of twinning in β-Ga₂O₃ filament inclusions on Ga₂O₃ thin films epitaxially grown on sapphire substrates by MOCVD. In ELITECH´25 : 27th Conference of Doctoral Students. Bratislava. May 28, 2025. Zost. A. Kozáková et al. - Bratislava : Spektrum STU, 2025. ISBN 978-80-227-5492-7. Typ: AFD
- CHOUHAN, Hemendra - DOBROČKA, Edmund - NÁDAŽDY, Peter - ŤAPAJNA, Milan - HUŠEKOVÁ, Kristína - CORA, Ildikó - ROSOVÁ, Alica - MIKOLÁŠEK, M. - EGYENES, Fridrich - KESHTKAR, Javad - HRUBIŠÁK, Fedor - SOBOTA, Michal - ŠIFFALOVIČ, Peter - GREGUŠOVÁ, Dagmar - POHORELEC, Ondrej - WOSKO, M. - PASZKIEWICZ, R. - GUCMANN, Filip**. Rotational domains and origin of improved crystal quality in heteroepitaxial (201) β-Ga2O3 films grown on vicinal substrates by MOCVD. In Journal of Alloys and Compounds, 2025, vol. 1044, no. 184481. (2024: 6.3 - IF, Q1 - JCR, 1.192 - SJR, Q1 - SJR, karentované - CCC). (2025 - Current Contents, WOS, SCOPUS). ISSN 0925-8388. Dostupné na: https://doi.org/10.1016/j.jallcom.2025.184481 Typ: ADCA
- ROSOVÁ, Alica - ČAPLOVIČOVÁ, M. - RUTERANA, P. - DOBROČKA, Edmund - ELIÁŠ, Peter - GUCMANN, Filip - HASENÖHRL, Stanislav - STOKLAS, Roman - KUZMÍK, Ján. Influence of InAlN layer Mg doping on the quality of InN/In0.61Al0.39N heterostructure deposited by MOCVD. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 30-33. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21. APVV 21-0008.) Typ:
- STOKLAS, Roman - HASENÖHRL, Stanislav - GREGUŠOVÁ, Dagmar - DOBROČKA, Edmund - GUCMANN, Filip - ELIÁŠ, Peter - ROSOVÁ, Alica - MIČUŠÍK, Matej - CHROBÁK, Š. - KUZMÍK, Ján. Electron mobility analysis of InN/In0.61Al0.39N heterostructure after HCl treatment. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. - IEEE, 2024, p. 50-53. ISBN 979-8-3315-4060-9. ISSN 2474-9737. Dostupné na: https://doi.org/10.1109/ASDAM63148.2024.10844678 (VEGA 2/0068/21. APVV 21-0008.) Typ: AECA
- ŤAPAJNA, Milan - EGYENES, Fridrich - HRUBIŠÁK, Fedor - HUŠEKOVÁ, Kristína - DOBROČKA, Edmund - NÁDAŽDY, Peter - ROSOVÁ, Alica - GUCMANN, Filip. Heteroepitaxy of Ga2O3 films using liquid-injection MOCVD: Impact of Hydrogen annealing on transport properties of MOSFETs. In EM-NANO 2025 : 10th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, June 11-14, 2025 Fukui, Japan. Typ: AFE
- ŤAPAJNA, Milan** - EGYENES, Fridrich - HRUBIŠÁK, Fedor - HUŠEKOVÁ, Kristína - DOBROČKA, Edmund - ROSOVÁ, Alica - VINCZE, A. - MOŠKO, Martin - GUCMANN, Filip. Transport and thermal properties of heteroepitaxial Ga2O3 MOSFETs grown by liquid-injection MOCVD. In 2025 IEEE 15th International Conference “Nanomaterials: Applications & Properties” (IEEE NAP-2025), : Book of Abstracts, Bratislava, Slovakia, Sept. 7-12, 2025. - Bratislava : Institute of Electrical and Electronics Engineers, 2025, p. 06ubmp-10. (APVV-21-0231 : Tranzistory na báze 2D kovových chalkogenidov pripravených teplom podporovanou konverziou.) Typ: AFF