Projects

Deputy Director IEE SAS
Ing. Milan Ťapajna, PhD.

International

Current
  • Establishment of reliability laboratory for pawer modules and joint reserch of GaN and Ga2O3 power devices
    Program: Bilateral - other
    Duration: 1. 7. 2023 – 30. 6. 2027

National

Current
  • Colour centres in diamond – correlation between atomic structure and opto-electronic properties
    Program: SRDA
    Duration: 1. 9. 2024 – 31. 12. 2027
  • Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion
    Program: SRDA
    Duration: 1. 7. 2022 – 30. 6. 2026
  • Research of fabrication technology for low-cost oxide-based semiconductorelectronic devices for IoT and sensor applications
    Program:
    Duration: 1. 1. 2024 – 30. 6. 2026
  • Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applications
    Program: SRDA
    Duration: 1. 7. 2021 – 30. 6. 2025
  • Advanced GaAs-based nanomembrane heterostructures for highperformance RF devices
    Program: SRDA
    Duration: 1. 7. 2022 – 30. 6. 2025
  • p-GaN electronics for energy savings and beyond-CMOS circuits
    Program: SRDA
    Duration: 1. 7. 2022 – 30. 6. 2025
Finished
  • Electronic and optoelectronic devices based on ultra-wide bandgap Ga2O3 semiconductor
    Program: VEGA
    Duration: 1. 1. 2021 – 31. 12. 2024
  • Building a centre for advanced material application SAS
    Program:
    Duration: 1. 7. 2019 – 30. 6. 2023
Employees