Projects

Ing. Jozef Osvald, DrSc.

International

Finished
  • Photoelectric phenomena on surface-barrier structure with quantum dots
    Program: Inter-academic agreement
    Duration: 1. 1. 2005 – 31. 12. 2007
  • Theoretical and experimental study of III-N structures
    Program: Inter-academic agreement
    Duration: 1. 1. 2004 – 31. 12. 2006
  • Advanced Semiconductor Devices and Microsystems - ASDAM \'04
    Program: FP6
    Duration: 1. 4. 2004 – 1. 5. 2005

National

Finished
  • Physical problems of MISFET and MISHFET structures based on III-V and III-N semiconductors
    Program: VEGA
    Duration: 1. 1. 2017 – 31. 12. 2020
  • Advanced AlGaN/GaN HEMT and MISHEMT transistors for high temperature electronics and sensors
    Program: VEGA
    Duration: 1. 1. 2013 – 31. 12. 2016
Employees