Mgr. Fridrich Egyenes, PhD.
National
Current
- Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted ConversionProgram: SRDADuration: 1. 7. 2022 – 30. 6. 2026
- Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applicationsProgram: SRDADuration: 1. 7. 2021 – 30. 6. 2025
- Advanced GaAs-based nanomembrane heterostructures for highperformance RF devicesProgram: SRDADuration: 1. 7. 2022 – 30. 6. 2025
- p-GaN electronics for energy savings and beyond-CMOS circuitsProgram: SRDADuration: 1. 7. 2022 – 30. 6. 2025
Finished
- Electronic and optoelectronic devices based on ultra-wide bandgap Ga2O3 semiconductorProgram: VEGADuration: 1. 1. 2021 – 31. 12. 2024
- Systematic investigation of Ohmic contacts for devices based on rhombohedral gallium oxide (alfa-Ga2O3)Program: DoktoGrantDuration: 1. 1. 2021 – 31. 12. 2021