Article list
Highly Si-doped gallium nitride (n++ GaN) layers play a key role in developing reliable high-electron-mobility transistors (HEMTs) for power and communication electronics. Our researchers from the group of III-V semiconductors investigated their growth using metal-organic chemical vapor deposition (MOCVD) at 800 °C and optimized the silicon precursor flow (SiH₄) to improve both electrical and structural…
On October 28, 2025, the Institute of Electrical Engineering of the Slovak Academy of Sciences (IEE SAS) welcomed a distinguished delegation from Lithuania, led by Ms. Wang Hsueh-Hong, Head of the Taiwan Representative Office in Lithuania. Among the guests were prominent representatives of the Lithuanian academic community – Dr. Aidas Matijosius, Dean of the Faculty…
Representatives of the Taiwan Representative Office in Bratislava (TROB), Mr. David Li Nanyang, together with the director of the Institute of Electrical Engineering of the Slovak Academy of Sciences (IEE SAS), RNDr. Vladimír Cambel, DrSc. and the rector of the Slovak University of Technology, Prof. Ing. Maximilián Strémy, PhD. signed their third cooperation agreement on…
Magnetic shielding is an integral part of many devices in industrial, medical or research sector. The most common shielding method is passive shielding, however using a superconducting and ferromagnetic material we can obtain much better results. The disadvantage of such magnetic cloak is unfortunately the need to cool it down to cryogenic temperatures (in this…
Time: October 17, 2025 on 10,00 a.m. Place: ElÚ SAV, v.v.i. (meeting room 101) Program:
Time: October 10, 2025 on 10,00 a.m. Place: ElÚ SAV, v.v.i. (meeting room 101) Program:
Institute of Electrical Engineering invites you to a lecture by Dr. Gábor Méhes (Waseda University, Japan) on 8 October, 2025 at 9:30 a.m. in the IEE SAS Meeting Room 101 at Dúbravská Cesta 9 in Bratislava. Title of the lecture: Advancements in the fields of organic electronics and bioelectronics through research in Japan, Sweden, and the US. Dr. Gábor Méhes is…
The Institute of Electrical Engineering of the Slovak Academy of Sciences announces a selection procedure for the position of Senior Research Scientist, specializing in the preparation and characterization of semiconductor sensors. The work will focus on independent scientific research in this field, with the use of X-ray photoelectron spectroscopy, and will include testing the electrical…
Applicant will deal with the growth and processing of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition. Main emphasize will be given to heterostructure quantum wells containing In(Al)N compounds for future ultra-fast transistors, mixed-signal electronics as well as GaN-based vertical switches. Material study will include several techniques for structural, electrical and optical investigations. Finally,…
InN has been recognized as a far-reaching candidate for ultra-high-speed electronics since almost two decades ago. Indeed, very recently these expectations were supported by us extracting the electron drift velocity of 1 ×108 cm/s in 775-nm thick InN, the highest ever reported value in any semiconductor material. We report proof-of-concept N-polar InN/In0.61Al0.39N heterostructures. 20-nm thick…