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Si-Doped GaN Cap Layer Enhances Stability and Prevents Current Collapse in HEMTs

Highly Si-doped gallium nitride (n++ GaN) layers play a key role in developing reliable high-electron-mobility transistors (HEMTs) for power and communication electronics. Our researchers from the group of III-V semiconductors investigated their growth using metal-organic chemical vapor deposition (MOCVD) at 800 °C and optimized the silicon precursor flow (SiH₄) to improve both electrical and structural…

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