Core–shell GaP/ZnO nanowires (NWs) were prepared in a two-step process: (1) GaP NWs were grown on GaP substrate by low-pressure metalorganic vapour phase epitaxy using 30 nm Au seeds as nucleation centres, (2) the GaP NWs were covered in a thin nanocrystalline Ga-doped ZnO layer by sputtering in a Perkin Elmer planar RF diode system. Electrical contacts were processed to individual GaP/ZnO NWs using electron beam lithography, evaporation and lift-off of metallic layers: Au/Zn (GaP core) and Au/Al (ZnO shell). Electrical and photocurrent measurement of the NWs confirmed that a radial pn heterojunction was formed between the GaP core and ZnO shell.
TEM cross-section of the GaP/ZnO core-shell nanowire (left) and SEM sideview of the contacted radial PN heterojunction (right)
Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Dujavová, A., and Novák, J.: Zinc-doped gallium phosphide nanowires for photovoltaic structures, Applied Surface Sci 269 (2013) 72-76.* IF: 2,11
Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Križanová, Z., and Novák, J.: Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization, Applied Surface Sci 267 (2013) 60-64.* IF: 2,11
Novák, J., Križanová, Z., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., Kováč, J., Šutta, P., and Mikulics, M.: Structural and optical properties of individual GaP/ZnO core-shell nanowires, Vacuum 98 (2013) 106-110. IF: 1,53
Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., Mikulics, M., and Grünberg, P.: Properties of individual GaP/ZnO core-shell nanowires with radial PN junction. In: SPIE Microtechnologies 2013. Nanoeng.: Fabric., Propert., Optics, Devices X. Grenoble 2013, Proc. SPIE 8766 (2013) 8766-8.