There is a continuous effort to increase speed performance of III-V-based transistors. Among other limitations, which hinder transistor performance, there is a relatively high effective mass of electrons in the GaN channel. In our work, we propose and theoretically analyze transistors with a strained InN channel, which may increase transistor speed by 2.5 times. Transistor proposal takes into account possible technological problems of the growth; and thus it is proposed with N polarity. Consequently, InN channel can be grown as a last semiconductor layer which is insulated from the gate metal using a dielectric layer. In this way we expect to fill the “terahertz gap” between electron and photon devices.
Calculated energy band-gap profile and epi-structure of the N-polarity InN/GaN/InAlN HEMT.
Kuzmik, J.: N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors, Applied Phys. Express 5, 044101 (2012). IF: 3,013