Dear colleagues,
let me invite you to the next institute seminar tomorrow Thursday 11 June 2026 at 10:00 in Meeting room 101. This week presentation will be done by:
Assoc. prof. Ondřej Caha, PhD.
Department of Condensed Matter Physics, Faculty of Science, Masaryk University in Brno
Ferroelectric phase transitions in chalcogenide thin films
Abstract:
Fast, reversible, and low-power manipulation of the spin texture is crucial for next-generation spintronic devices such as non-volatile bipolar memories, switchable spin-current injectors, and spin-field-effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables electronic control of the Rashba-type spin texture via reversible, switchable polarization. The IV-telluride family consists of normal semiconductor PbTe, inverted band gap semiconductor SnTe, and ferroelectric normal semiconductor GeTe. The pseudoternary alloy (Pb,Sn,Ge)Te thus allows tuning of the band gap, topological properties, and the ferroelectric transition temperature. Similar possibilities are also available in the selenide (Pb,Sn,Ge)Se family.
We will present the utilization of a new helium cryostat for X-ray diffraction. The temperature dependence of structural properties will be presented. The structural properties results are compared with the electronic structure studied by ARPES and other techniques.
We look forward to seeing you.