We also engage in the epitaxial growth of heterostructures based on III-V materials (GaAs, GaP, and related alloys), focusing primarily on high-electron-mobility transistors (HEMTs) that are capable of high frequency operation and low-noise performance. The grown epitaxial heterostructures undergo detailed material diagnostics. Then, we use them to fabricate microelectronic devices, which are further analysed using various electrical methods.
Recently, we demonstrated the successful transfer of GaAs nanomembranes onto foreign substrates using the epitaxial lift-off technique. We showed that when such nanomembranes are used to fabricate transistors, they can better dissipate the generated waste heat, potentially leading to longer lifetimes and enabling operation at higher power.
Publications:
Gucmann, F., Meng, B., Chvála, A., Kúdela, R., Yuan, C., Ťapajna, M., Florovič, M., Egyenes, F., Eliáš, P., Hrubišák, F., Kováč, J.Jr., Fedor, J., and Gregušová, D.: Improved thermal performance of InGaAs/GaAs nanomembrane HEMTs transferred onto various substrates by epitaxial lift-off, ACS Applied Electron. Mater. 6 (2024) 5651–5660.
Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.
Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65.
Lettrichová, I., Laurenčíková, A., Pudiš, D., Novák, J., Goraus, M., Kováč, J.jr., Gaso, P., and Nevrela, J.: 2D periodic structures patterned on 3D surfaces by interference lithography for SERS, Applied Surface Sci 461 (2018) 171-174.
Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., Szobolovszký, R., and Novák, J.: GaP nanocones covered with silver nanoparticles for surface-enhanced Raman spectroscopy, Applied Surface Sci 461 (2018) 149-153.
Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.
Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Dobročka, E., Novák, J., : Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires. Applied Surface Sci 395 (2017) 162-165.
Stoklas, R., Gregušová, D., Blaho, M., Fröhlich, K., Novák, J., Matys, M., Yatabe, Z., Kordoš, P., Hashizume, T., : Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction,. Semicond. Sci Technol. 32 (2017) 045018.
Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Kováč, J., : Methanol sensor for integration with GaP nanowire photocathode. Proc. SPIE 10248, Nanotechnology VIII (2017) 102480E.
Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Novotný, I., Kováč, J., Valentin, M., Kováč, J., Ďurišová, J., Pudiš, D., : Optical and mechanical properties of a compact ZnO layer with embedded GaP nanowires. Applied Surface Sci 395 (2017) 180-184.
Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Micusik, M., Gregušová, D., : Optimization of UV-assisted wet oxidation of GaAs,. J. Vacuum Sci Technol. B 35 (2017) 01A116. (VEGA 2/0105/13). (APVV 15-0243). (CENTE II).
Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P., : Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144. (VEGA 2/0105/13). (CENTE). (APVV 14-0297).
Mikulics, M., Arango, Y., Winden, A., Adam, R., Hardtdegen, A., Grützmacher, D., Plinski, E., Gregušová, D.,Novák, J., Kordoš, P., Moonshiram, A., Marso, M., Sofer, Z., Lüth, H., Hardtdegen, H., : Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes. Applied Phys. Lett. 108 (2016) 061107.
Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap. J. Vacuum Sci Technol. B 33 (2015) 01A111. (VEGA 2/0105/13). (VEGA 2/0098/13). (CENTE).
Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., Kordoš, P., : InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator. Applied Phys. Lett. 105 (2014) 183504.
Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J., Mikolášek, M., Vávra, I., Novák, J., : Analysis of the core–shell interface between zinc-blende GaP and wurtzite ZnO. Solid-State Electr. 100 (2014) 7-10.
Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Rosová, A., Novák, J., : Annealing of gold nanoparticles on GaP(111)B: initial stage of GaP nanowire growth. Phys. Status Solidi RRL 8 (2014) 321-324.
Novák, J., Šutta, P., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., : Columnar microstructure of the ZnO shell layer deposited on the GaP nanowires. Applied Surface Sci 312 (2014) 162-166.
Kordoš, P., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., Novák, J., : Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition. Applied Phys. Lett. 100 (2012) 142113.
Kordoš, P., Fox, A., Kúdela, R., Mikulics, M., Stoklas, R., Gregušová, D., : GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD. Semicond. Sci Technol. 27 (2012) 115002.
Gregušová, D., Kúdela, R., Eliáš, P., Šoltýs, J., Kostič, I., Cambel, V., : GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs. J. Micromech. Microeng. 20 (2010) 097001.