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| CERBERUS – Farebné centrá v diamante – korelácia medzi atómovou štruktúrou a optoelektronickými vlastnosťami | |
| Colour centres in diamond – correlation between atomic structure and opto-electronic properties | |
| Program: | SRDA |
| Project leader: | Ing. Varga Marian, PhD. |
| Annotation: | The subject of the project is in the field of quantum technologies. We will prepare and characterize optically -activedefects in diamonds and correlate the atomic structures with optical properties to be used for quantum applicati ons.For a wide range of dopant concentrations, we will identify the dopant distributions and study the evolution ofdopants’ configuration in-situ, during thermal annealing, using atomic-resolution microscopy and spectroscopytechniques. We will further study the effect of annealing on the opto-electronic properties by measuringphotoluminescence, photocurrent and electroluminescence for the same set of samples. Graphene transparentelectrodes on a diamond surface will be fabricated for phototransport measurements. Diamond-based hybrid p-i-ndiodes will be prepared for electroluminescence measurements. We will focus on finding a correlation between theatomic structure and the opto-electronic properties of differently doped diamonds. This will contribute to theunderstanding of the fundamental relationship needed to efficiently design optically -active elements for diamondquantum devices. |
| Duration: | 1.9.2024 – 31.12.2027 |
| Transit2D – Tranzistory na báze 2D kovových chalkogenidov pripravených teplom podporovanou konverziou | |
| Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion | |
| Program: | SRDA |
| Project leader: | Ing. Ťapajna Milan, PhD. |
| Annotation: | 2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2DTMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. Thesematerials have wide band gap and, depending on the structure of the material, show anisotropic electrical andoptical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductorgate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties ofhorizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to thoseprepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gateapproach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization |
| Duration: | 1.7.2022 – 30.6.2026 |
| Ultratenké homogénne povrchové vrstvy na štruktúrach komplexnej morfológie pre vylepšenie výkonu batérii využitím depozície po atómových vrstvách | |
| Ultra-thin conformal surface coatings of complex-morphology structures for improving battery performance using atomic layer deposition | |
| Program: | VEGA |
| Project leader: | Ing. Hudec Boris, PhD. |
| Annotation: | Project is focused on the development and optimization of method of 3D deposition of conformal ultra-thincoatings using ALD (atomic layer deposition) on structures of complex morphology, such as micro-porous layersand powders. The method will subsequently be applied in preparation of new generation Li-based batteries, bypassivation and modification of micro-porous surfaces of cathode layers. Effect of ultra-thin ALD coatingsconformality at the nano-scale will be systematically evaluated by correlation of electron microscopy analyseswith electrochemical measurements of prepared batteries. Next step will be the modification of surfaces ofdiscrete metal and ceramic micro-particles and powders with the aim of their subsequent application in fabrication of novel ceramic and metal materials and also new materials for experimental battery electrodes. |
| Duration: | 1.1.2022 – 31.12.2025 |
| Moderné elektronické súčiastky na báze ultraširokopásmového polovodiča Ga2O3 pre budúce vysokonapäťové aplikácie | |
| Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applications | |
| Program: | SRDA |
| Project leader: | Ing. Gucmann Filip, PhD. |
| Annotation: | Wide bandgap (WBG) semiconductor devices represent one of the key technologies in development of high power and high frequency systems for electric power conversion and telecommunications owing to their fundamental benefit of higher breakdown electric fields, in some cases increased electron mobility, and possibility to form heterostructures and 2D electron gas. GaN and SiC, two typical WBG examples also benefit from moderate values of thermal conductivity allowing for more efficient sinking of generated waste heat, lower channel temperatures, and enhanced device reliability. New emerging semiconductor materials with even higher bandgap energies (Eg>3.4eV) referred to as ultrawide bandgap materials allow for further improvements in high power and high voltage handling solid-state electronic devices. Currently, semiconducting gallium oxide (Ga2O3) is under extensive study and expected to provide base material for rectifying Schottky -gate diodes and field-effect transistors for applications operating in kV range thanks to its good scalability, relatively simple synthesis, availability of native melt-grown substrates, and wide range of achievable n-type doping levels. The main aim of the proposed project constitutes material research and development of technology for epitaxial growth of epitaxial α -,β-, and ε-Ga2O3 layers and for processing of basic unipolar and bipolar electronic devices based on prepared Ga2O3 layers for future high voltage/power applications. Ga2O3 layers will be grown using liquid injection metalorganic chemical vapour deposition on sapphire, and higher thermal conductivity SiC substrates. We also aim to prepare Schottky diodes, FETs, and all-oxide Ga2O3 PN diodes using naturally p-type oxides (e.g. NiO, In2O3, CuO2). Comprehensive structural, electrical, optical, and thermal study of prepared epitaxial layers and devices will be conducted and numerous original, high-impact results are expected to be obtained. |
| Duration: | 1.7.2021 – 30.6.2025 |
| Elektronické a optoelektronické súčiastky na báze ultra-širokopásmového Ga2O3 polovodiča | |
| Electronic and optoelectronic devices based on ultra-wide bandgap Ga2O3 semiconductor | |
| Program: | VEGA |
| Project leader: | Ing. Ťapajna Milan, PhD. |
| Annotation: | Recently, great research effort has been devoted to ultra-wide bandgap semiconductors for the preparation ofhigh-performance electronic devices operating in the electric fields up to tens of kV and UV photodetectors. Thisproject aims the research of the growth of epitaxial layers and electronic as well as optoelectronic devices basedon Ga2O3. Based on preliminary results, we will investigate the growth of rhombohedral Ga2O3 with the highestbandgap energy. Epitaxial layers will be prepared by metal-organic chemical vapor deposition using liquid phaseprecursor injection. The layers will be used for preparation and research of electronic devices with a focus onSchottky diodes and switching MOSFET transistors. We will study the transport and thermal properties, parasiticeffects and breakdown mechanisms of the developed electronic devices as well as electro-optical properties ofp-n heterojunctions. We will also target exploratory research for improvements in thermal management of thepower transistors. |
| Duration: | 1.1.2021 – 31.12.2024 |