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| Nanoelsen – Nanoštrukturované tenkovrstvové materiály vyznačujúce sa slabými väzbovými interakciami pre elektronické a senzorické aplikácie | |
| Nanostructured thin-film materials characterized by weak binding interactions for electronic and sensoric applications | |
| Program: | SRDA |
| Project leader: | RNDr. Gregušová Dagmar, DrSc. |
| Annotation: | The proposed project is focused on the basic research of the preparation processes and properties ofsemiconducting sulfides of transition metals such as Mo, W and Ni and selected combinations with their oxides inthe form of mixed sulfides and oxides, as well as the possibilities of their doping with noble metals (Pt, Au) for usein gas sensors as well as in supercapacitors. We also anticipate full utilization of semiconductormicroelectronic and micromechanical techniques and micro / nanotechnologies, which can significantly contributeto qualitatively improved detection properties, low operating power consumption of gas sensors as well asincreased energy efficiency and supercapacitor lifetime. |
| Duration: | 1.7.2022 – 30.6.2026 |
| Transit2D – Tranzistory na báze 2D kovových chalkogenidov pripravených teplom podporovanou konverziou | |
| Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion | |
| Program: | SRDA |
| Project leader: | Ing. Ťapajna Milan, PhD. |
| Annotation: | 2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2DTMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. Thesematerials have wide band gap and, depending on the structure of the material, show anisotropic electrical andoptical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductorgate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties ofhorizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to thoseprepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gateapproach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization |
| Duration: | 1.7.2022 – 30.6.2026 |
| Moderné elektronické súčiastky na báze ultraširokopásmového polovodiča Ga2O3 pre budúce vysokonapäťové aplikácie | |
| Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applications | |
| Program: | SRDA |
| Project leader: | Ing. Gucmann Filip, PhD. |
| Annotation: | Wide bandgap (WBG) semiconductor devices represent one of the key technologies in development of high power and high frequency systems for electric power conversion and telecommunications owing to their fundamental benefit of higher breakdown electric fields, in some cases increased electron mobility, and possibility to form heterostructures and 2D electron gas. GaN and SiC, two typical WBG examples also benefit from moderate values of thermal conductivity allowing for more efficient sinking of generated waste heat, lower channel temperatures, and enhanced device reliability. New emerging semiconductor materials with even higher bandgap energies (Eg>3.4eV) referred to as ultrawide bandgap materials allow for further improvements in high power and high voltage handling solid-state electronic devices. Currently, semiconducting gallium oxide (Ga2O3) is under extensive study and expected to provide base material for rectifying Schottky -gate diodes and field-effect transistors for applications operating in kV range thanks to its good scalability, relatively simple synthesis, availability of native melt-grown substrates, and wide range of achievable n-type doping levels. The main aim of the proposed project constitutes material research and development of technology for epitaxial growth of epitaxial α -,β-, and ε-Ga2O3 layers and for processing of basic unipolar and bipolar electronic devices based on prepared Ga2O3 layers for future high voltage/power applications. Ga2O3 layers will be grown using liquid injection metalorganic chemical vapour deposition on sapphire, and higher thermal conductivity SiC substrates. We also aim to prepare Schottky diodes, FETs, and all-oxide Ga2O3 PN diodes using naturally p-type oxides (e.g. NiO, In2O3, CuO2). Comprehensive structural, electrical, optical, and thermal study of prepared epitaxial layers and devices will be conducted and numerous original, high-impact results are expected to be obtained. |
| Duration: | 1.7.2021 – 30.6.2025 |
| NanoMemb-RF – Moderné nanomembránové heteroštruktúry na báze GaAs pre vysoko produktívne vysokofrekvenčné prvky | |
| Advanced GaAs-based nanomembrane heterostructures for highperformance RF devices | |
| Program: | SRDA |
| Project leader: | RNDr. Gregušová Dagmar, DrSc. |
| Annotation: | The main aim of the proposed project is to expand the basic knowledge and to master the fabrication technology ofthe advanced nanomembrane AlGaAs/GaAs heterojunction devices for high-performance RF applications.Insufficient removal of the waste heat in electronic devices due to the Joule losses leading to overheating and earlydevice failure often requires foreign, high thermal conductivity substrates to be employed. As opposed to themainstream research of the GaN-based electronic devices prepared directly on sapphire or SiC, proposed GaAsbased devices will be fabricated upon self-supporting heterostructure nanomembranes transferred onto varioussubstrates. It is very timely, original, and desirable approach to extend the utilization of the GaAs-based devicesmaterial potential, as demonstrated by our preliminary results. |
| Duration: | 1.7.2022 – 30.6.2025 |
| PEGANEL – p-GaN elektronika pre úsporu energie a post-CMOS obvody | |
| p-GaN electronics for energy savings and beyond-CMOS circuits | |
| Program: | SRDA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Annotation: | III-N semiconductors are probably the most versatile and promising semiconductor family, consisted of artificialcompounds made of GaN, AlN and InN. In the project proposal we describe new technological concepts withsufficient freedom to solve main problems of the III-N post-beyond CMOS age: in transistors co-existence of theparasitic n-channel along with the p-channel, as well as low hole gas density and mobility. Similarly, we aim todemonstrate scalable threshold voltage in the enhancement-mode p-doped power transistors, which are needed bythe industry for efficient, energy-saving convertors. In these aspects, our laboratories already showed verypromising results proving the competence to reach described targets. If successfully implemented, results of ourproposed project would represent a significant step forward not only from the world-wide point of view but is also infull agreement with the RIS3 SK (perspective areas of specialization of the Slovak economy), particularly in thefield of semiconductors for electric cars of automotive industry, as well as in information and communicationsciences. |
| Duration: | 1.7.2022 – 30.6.2025 |
| Výskum a vývoj kontaktov pre nové materiály a súčiastky | |
| Contact engineering for advanced materials and devices | |
| Program: | VEGA |
| Project leader: | RNDr. Gregušová Dagmar, DrSc. |
| Annotation: | Intensive research has so far been done into metallic contacts to semiconductors. However, new types ofconductivity, materials and devices, and new contact formation mechanisms require new insights into theformation of such contacts. Our aim is to determine the processes and physics behind metallization schemes fornormally-off InAlN-based heterostructure high electron mobility transistors with hole conductivity. InAlN with ahigh molar fraction of InN will be doped with Mg, and the ohmic and Schottky metallic stacks will be optimized. New transition metal dichalkogenide materials (TMDCs) are very promising for new device applications. However,metallization schemes for TMDCs are very challenging. TMDCs exhibit varying band gap widths in dependenceof their thickness. Our aim is to study metallization schemes for TMDCs, their topology, and explain differences between ex-foliated and grown samples, and differences between back-gated and top-gated devices in correlation with basic TMDCs properties. |
| Duration: | 1.1.2021 – 31.12.2024 |
| TMD2DCOR – Metalické 2D dichalkogenidy prechodných kovov: príprava, štúdium vlastností a korelované stavy | |
| Fabrication, physics and correlated states in metallic 2D transition metal dichalcogenides | |
| Program: | SRDA |
| Project leader: | Dr. rer. nat. Hulman Martin |
| Annotation: | The discovery of graphene in 2004 has brought a massive interest of scientists active in condensed-matter physicson research of 2D materials. Even though these materials have a long history starting already in the twenties of the20th century, the past years have seen an intensive renascence of interest in 2D materials. Ultra-thin samples ofmany 2D materials have been successfully prepared with electronic properties that may exhibit correlatedelectronic phenomena such as charge density waves and superconductivity. One of the well-studied families of the2D materials are transition metal dichalcogenides (TMDs). TMDs consist of hexagonal layers of metal atomssandwiched between two layers of chalcogen atoms with a MX2 stoichiometry.In this project, we focus on those materials from the TMD family that exhibit strongly correlated electronic states:NbSe2, TiSe2, TaS2, TaSe2 and PtSe2. The goal of the project is to prepare ultrathin (≤ 10 nm) layers and bulksamples and characterise them thoroughly in terms of the thickness, crystallinity, homogeneity, optical andelectronic properties. A special attention will be paid to charge density wave states and superconductivity in thesematerials and how they evolve with the sample thickness, doping, external electric and magnetic fields and detailsof the growth process.The scientific program also aims at preparing heterostructures built up of these materials as well as hybrid systemscombining TMDs with other materials. This research also includes a detailed characterisation of heterostructures toprovide a feedback to optimise the growth process. |
| Duration: | 1.7.2020 – 30.6.2023 |
| Opracovanie povrchu polovodiča ako cesta k novým III-As a III-N elektronickým súčiastkám | |
| Surface processing of semiconductors as the way towards new III-As and III-N electronic devices | |
| Program: | VEGA |
| Project leader: | RNDr. Gregušová Dagmar, DrSc. |
| Annotation: | Surfaces of III-V semiconductors exhibit large densisties of surface states that limit the use of the semicondutorsin electronics. Native oxides on III-V surfaces do not match the qualiy of oxides on the surface of silicon. Thesurface states have been studied and manipulated by many researchers with the aim to eliminate their infuence.Our aim is to find out how technology is used to eliminate or passivate the states. We intend to useheterostrucutres whose surface will be manipulated to allow for the preparation of high quality MOSHFETs.Manipulation with surface states leads to new types of device. It will thus be possible to integrate various types oftransistor on a single wafer. To explore properties of individual layers of heterostructure by optical measurementwill necessite their release from original substrates and transfer to host substrates. Procedures of heterostructurerelease and transfer will be used in the integration of other semiconductor devices on planar and non-planarsubstrates. |
| Duration: | 1.1.2017 – 31.12.2020 |
| Technológia hradiel s izolujúcou vrstvou pre kvalitné, vyskoúčinné III-As a III-N tranzistory | |
| Insulated gate technologies for high-performance III-As and III-N transistors | |
| Program: | VEGA |
| Project leader: | RNDr. Gregušová Dagmar, DrSc. |
| Duration: | 1.1.2013 – 31.12.2016 |
| Kov-oxid-polovodič (MOS) štruktúry na III-V materiáloch | |
| Metal-oxide-semiconductor structures on III-V semiconductors | |
| Program: | VEGA |
| Project leader: | RNDr. Gregušová Dagmar, DrSc. |
| Duration: | 1.1.2009 – 31.12.2012 |
| Vplyv dielektrickej pasivácie na vlastnosti AlGaN/GaN HEMT-ov | |
| Influence of dielectric passivation on properties of AlGaN/GaN HEMTs | |
| Program: | VEGA |
| Project leader: | RNDr. Gregušová Dagmar, DrSc. |
| Duration: | 1.1.2006 – 1.12.2008 |