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| Fotoelektrický jav na povrchovej bariére s kvantovými bodkami | |
| Photoelectric phenomena on surface-barrier structure with quantum dots | |
| Program: | Inter-academic agreement |
| Project leader: | Ing. Osvald Jozef, DrSc. |
| Annotation: | no description |
| Duration: | 1.1.2005 – 31.12.2007 |
| Teoretické a experimentálne štúdium III-N štruktúr | |
| Theoretical and experimental study of III-N structures | |
| Program: | Inter-academic agreement |
| Project leader: | Ing. Osvald Jozef, DrSc. |
| Annotation: | no description |
| Duration: | 1.1.2004 – 31.12.2006 |
| ASDAM – – | |
| Advanced Semiconductor Devices and Microsystems – ASDAM \’04 | |
| Program: | FP6 |
| Project leader: | Ing. Osvald Jozef, DrSc. |
| Duration: | 1.4.2004 – 1.5.2005 |
National
| Fyzikálne problémy štruktúr MISFET a MISHFET na báze III-V a III-N polovodičov | |
| Physical problems of MISFET and MISHFET structures based on III-V and III-N semiconductors | |
| Program: | VEGA |
| Project leader: | Ing. Osvald Jozef, DrSc. |
| Annotation: | The project is oriented towards physical problems of III-V and III-N semiconductors. Many problems with these semiconductors are not solved yet or we have not their technological solution. Among these questions we may name in first the problems connected with the physics and chemistry of an interface between a semiconductor and a dielectric, solving of which is crucial for quality of this interface. The density of interface states of the prepared samples and structures depends directly on the solution of these problems and a possible presence of Fermi level pinning at the semiconductor surface, too. By III-V MISFET structures we want to study frequency dependence of capacitance curves. There are theories that in accumulation a dispersion of the capacitance is caused by a low density of states at the bottom of the conduction band and that the capacitance increase in inversion is connected with the states in the middle of the gap. We shall try to verify these theories or maybe modify them on the basis of the obtained results. |
| Duration: | 1.1.2017 – 31.12.2020 |
| Pokročilé AlGaN/GaN HEMT a MISHEMT tranzistory pre vysokoteplotnú elektroniku a senzoriku | |
| Advanced AlGaN/GaN HEMT and MISHEMT transistors for high temperature electronics and sensors | |
| Program: | VEGA |
| Project leader: | Ing. Osvald Jozef, DrSc. |
| Duration: | 1.1.2013 – 31.12.2016 |