Ing. Roman Stoklas, PhD.
Publications for year 2025
On this page, you can search the on-line database of the Central Library of the SAS for the publications.
Publications
- DEHGHAN, Mohammad** - HORSKÝ, Matej - ŠČEPKA, Tomáš - STOKLAS, Roman - HUDEC, Boris - PLECENIK, T. Design and characterization of thin film H2 sensor for crossbar array implementation. In 2025 IEEE 15th International Conference “Nanomaterials: Applications & Properties” (IEEE NAP-2025), : Book of Abstracts, Bratislava, Slovakia, Sept. 7-12, 2025. - Bratislava : Institute of Electrical and Electronics Engineers, 2025, p. 09nna-19. (09I03-03-V02-00044 : Veľkoplošná výroba a charakterizácia 2D materiálov.) Typ: AFH
- HORSKÝ, Matej** - KRYLOV, Sergei - DEHGHAN, Mohammad - STOKLAS, Roman - ŠČEPKA, Tomáš - HUDEC, Boris. Characteristics of a nonlinear temperature sensor for application in in-sensor computing networks. In 2025 IEEE 15th International Conference “Nanomaterials: Applications & Properties” (IEEE NAP-2025), : Book of Abstracts, Bratislava, Slovakia, Sept. 7-12, 2025. - Bratislava : Institute of Electrical and Electronics Engineers, 2025, p. 09nna-21. Typ: AFH
- HUDEC, Boris** - HORSKÝ, Matej - DEHGHAN, Mohammad - ŠČEPKA, Tomáš - KRYLOV, Sergei - STOKLAS, Roman - PATRNČIAK, Michal - PLECENIK, T. Bottom-up approach towards in-sensor computing. In 2025 IEEE 15th International Conference “Nanomaterials: Applications & Properties” (IEEE NAP-2025), : Book of Abstracts, Bratislava, Slovakia, Sept. 7-12, 2025. - Bratislava : Institute of Electrical and Electronics Engineers, 2025, p. 09nna-24. Typ: AFF
- PECZ, Michal** - IZSÁK, Tibor - STOKLAS, Roman - HUDEC, Boris**. Atomic layer testing substrate (ALTS) for atomic layer deposition conformality evaluation. In 2025 IEEE 15th International Conference “Nanomaterials: Applications & Properties” (IEEE NAP-2025), : Book of Abstracts, Bratislava, Slovakia, Sept. 7-12, 2025. - Bratislava : Institute of Electrical and Electronics Engineers, 2025, p. 05mtfc-36. (VEGA 2/0162/22 : Ultratenké homogénne povrchové vrstvy na štruktúrach komplexnej morfológie pre vylepšenie výkonu batérii využitím depozície po atómových vrstvách.) Typ: AFH
- ROSOVÁ, Alica - ČAPLOVIČOVÁ, M. - RUTERANA, P. - DOBROČKA, Edmund - ELIÁŠ, Peter - GUCMANN, Filip - HASENÖHRL, Stanislav - STOKLAS, Roman - KUZMÍK, Ján. Influence of InAlN layer Mg doping on the quality of InN/In0.61Al0.39N heterostructure deposited by MOCVD. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 30-33. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21. APVV 21-0008.) Typ:
- STOKLAS, Roman - HASENÖHRL, Stanislav - GREGUŠOVÁ, Dagmar - DOBROČKA, Edmund - GUCMANN, Filip - ELIÁŠ, Peter - ROSOVÁ, Alica - MIČUŠÍK, Matej - CHROBÁK, Š. - KUZMÍK, Ján. Electron mobility analysis of InN/In0.61Al0.39N heterostructure after HCl treatment. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. - IEEE, 2024, p. 50-53. ISBN 979-8-3315-4060-9. ISSN 2474-9737. Dostupné na: https://doi.org/10.1109/ASDAM63148.2024.10844678 (VEGA 2/0068/21. APVV 21-0008.) Typ: AECA