Ing. Fedor Hrubišák
National
Current
- Gallium oxide power transistors for high-voltage operationProgram: SRDADuration: 1. 9. 2025 – 31. 8. 2029
- Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted ConversionProgram: SRDADuration: 1. 7. 2022 – 30. 6. 2026
Finished
- Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applicationsProgram: SRDADuration: 1. 7. 2021 – 30. 6. 2025
- Advanced GaAs-based nanomembrane heterostructures for highperformance RF devicesProgram: SRDADuration: 1. 7. 2022 – 30. 6. 2025
- Improvement of crystal quality of β-Ga2O3 grown on SiC using LI-MOCVD methodProgram: DoktoGrantDuration: 1. 1. 2023 – 31. 12. 2023