Topics


Scientists are invited to submit an abstract for oral or poster presentation in one or more of the following areas:

Emerging dielectric materials, technologies and new device approaches


  • Theory of dielectric materials, interface science of dielectrics in contact with semiconductors & metals
  • Advanced technologies for thin dielectric film growth (ALD, MOCVD, PLD, MBE,…)
  • Characterisation of dielectrics with high sensitivity & spatial resolution, characterisation at nano-scale
  • Multiferroics, 2-DEG at dielectric interfaces, emerging dielectric materials
  • Novel oxide-based approaches to engineer SOI and GOI wafers

Dielectrics for aggressively scaled CMOS and other field effect devices


  • High-k dielectrics on Si
  • High-k dielectrics on high mobility semiconductors: Ge, III-V, III-N
  • High-k/metal gate stack, characterisation, scaling, stability
  • Defect characterisation, engineering of dielectrics, leakage currents
  • Electrical characterisation and reliability of devices with alternative dielectrics

Dielectrics for memory applications


  • High-k dielectrics for MIM (DRAM etc.)
  • Resistive switching in dielectrics
  • Dielectrics for non-volatile memories (flash, nanocrystal-based memories,…)
  • Ferroelectrics

WoDiM news

June 27

Buses to Vienna Airport in Venue & Travelling section.

June 22

Shuttle bus information can be found in the program section.

June 9

The registration desk will be open since June 27, 3 pm at the conference venue. Welcome party will start at 6 pm.

May 27

- Travel information