Department of Thin Oxide Films - Laboratories

MOCVD laboratory

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The MOCVD laboratory at the Department of thin oxide films was transformed from CVD group existing at the Institute since late sixties of the last century. The development of the MOCVD laboratory was boosted by the event of high-TC superconducting oxide films. In collaboration with the Laboratoire des Matériaux et du Génie Physique, INPG, Grenoble new MOCVD technique based on liquid delivery of metal-organic precursors was developed. Various type of oxide films were already prepared by this technique, including superconducting YBa2Cu3O7, buffer layers CeO2, SrTiO3, and La1-xMnO3, La1-xSrxMnO3 films exhibiting colossal magnetoresistance. Recently we have focused our effort on preparation of highly conducting metal oxide films. We have prepared RuO2 layers by MOCVD using liquid delivery source and by thermal evaporation of powder precursors. These films are promising as electrodes in new generation of RAM and CMOS based devices. Actually we are using three horizontal MOCVD reactors, developed in the laboratory.

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MOS structures analysis

Capacitance-voltage characteristics of prepared MOS structures are analyzed using HP 4248A LCR meter at frequencies ranging from 10 KHz up to 1 MHz. Current-voltage characteristics are measured by KEITHLEY 6517A electrometer/high resistance meter.


X-ray diffraction laboratory

Laboratory exists and performs structure analysis around 30 years already. The main intention of the laboratory is analysis of the crystal structure and microstructure of the thin films deposited on different monocrystal substrates as Sapphire, Si, SrTiO3. Standard Bragg-Brentano diffraction, grazing incidence and rocking curve measurements we use for this purpose.

More detailed study of the texture and stress present inside of the thin films we perform by φ-scans and pole figure spectra measurements in collaboration with the LMGP laboratory at the Grenoble (France).

As a complementary approach to X-ray diffraction we also use the methods of Rutheford backscattering (RBS) and channeling of ions. Spectra measurements we perform in collaboration with Laboratory of neutron physics of the JINR in Dubna (Russia). Analysis of the spectra obtained by those methods allows us to study elemental composition, concentration gradients and interface characteristics of the films.


texture of thin film rocking curve sapphire
Different types of thin film textureRocking curveSapphire structure

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